參數(shù)資料
型號： AM29LV200T-90REC
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 256K X 8 FLASH 3V PROM, 90 ns, PDSO48
封裝： TSOP-48
文件頁數(shù)： 27/37頁
文件大?。?/td> 478K
代理商： AM29LV200T-90REC
27
Am29LV200
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
Parameter
-90R
-100
-120
-150
JEDEC
Std.
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
120
150
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
WLAX
t
AH
Address Hold Time
Min
50
50
50
65
ns
t
DVWH
t
DS
Data Setup Time
Min
50
50
50
65
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
50
50
50
65
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
30
30
30
35
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Byte
Typ
9
μs
Word
Typ
11
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
RB
Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns
相關(guān)PDF資料
PDF描述
AM29LV200B-90REC 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV200T-90REEB 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV200BB-120EC 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV200BT-80ECB RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88%
AM29LV200BT-80EE 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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