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參數(shù)資料
| 型號： | AM29LV200T-90RFC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 256K X 8 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | REVERSE, TSOP-48 |
| 文件頁數(shù)： | 14/37頁 |
| 文件大小： | 478K |
| 代理商： | AM29LV200T-90RFC |
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Am29LV200
14
P R E L IM IN A R Y
status bits, just as in the standard program operation.
See “Write Operation Status” for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
Notes:
1. See Table 5 for erase command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 3.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
20513D-6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV200T-90RFCB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV200T-90RFE | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV200T-90RFEB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV200T-90RFI | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV200T-90RFIB | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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