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參數(shù)資料
| 型號： | AM29LV256M |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| 中文描述： | 256兆位（16 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /價外控制 |
| 文件頁數(shù)： | 69/70頁 |
| 文件大小： | 1552K |
| 代理商： | AM29LV256M |
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September 15, 2003
Am29LV256M
67
D A T A S H E E T
Revision C+1 (May 28, 2003)
Global
Converted to full datasheet version.
Modified SecSi Sector Flash Memory Region section
to include ESN references.
Erase and Programming Performance
Input values into table that were previously TBD.
Modified notes.
CMOS Compatible
Corrected typos in table.
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
Changed the typical for the Accelerated Effective
Write Buffer Program Operation for Byte and Word to
6.25 and 12.5.
Revision C+2 (June 11, 2003)
Global
Modified speed grades available.
Revision C+3 (September 15, 2003)
Ordering Information
Added OPN note for ESN feature.
Tables 11 & 12 Command Definitions
Changed definition BA to XXX for Program/Erase Sus-
pend (Note 16) and for Program/Erase Resume (Note
17).
Program Suspend/Program Resume Command
Sequence
Removed - program suspended sector is required
when writing this command.
AC Characteristics - Hardware Reset
Added information for
t
RB.
AC Characteristics - Erase and Program
Operations
Added information for
t
BUSY
.
Trademarks
Copyright 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV256MH113R | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256MH123RPGI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| AM29LV256ML123RFI | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| Am29LV256ML113R | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
| Am29LV256ML123R | 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV256MH120RPGI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays |
| AM29LV256MH123RPGI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV256MH94REI | 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays |
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
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