參數(shù)資料
型號(hào)： AM29LV256MH113RPGI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
中文描述： 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝： 18 X 12 MM, 1 MM PITCH, FORTIFIED, BGA-64
文件頁(yè)數(shù)： 39/70頁(yè)
文件大小： 1655K
代理商： AM29LV256MH113RPGI
September 15, 2003
Am29LV256M
37
D A T A S H E E T
Figure 5.
Program Operation
Program Suspend/Program Resume
Command Sequence
The Program Suspend command allows the system to
interrupt a programming operation or a Write to Buffer
programming operation so that data can be read from
any non-suspended sector. When the Program Sus-
pend command is written during a programming pro-
cess, the device halts the program operation within 15
μ
s maximum (5
μ
s typical) and updates the status bits.
Addresses are not required when writing the Program
Suspend command.
After the programming operation has been sus-
pended, the system can read array data from any
non-suspended sector. The Program Suspend com-
mand may also be issued during a programming oper-
ation while an erase is suspended. In this case, data
may be read from any addresses not in Erase Sus-
pend or Program Suspend. If a read is needed from
the SecSi Sector area (One-time Program area), then
user must use the proper command sequences to
enter and exit this region.
The system may also write the autoselect command
sequence when the device is in the Program Suspend
mode. The system can read as many autoselect
codes as required. When the device exits the autose-
lect mode, the device reverts to the Program Suspend
mode, and is ready for another valid operation. See
Autoselect Command Sequence for more information.
After the Program Resume command is written, the
device reverts to programming. The system can deter-
mine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard pro-
gram operation. See Write Operation Status for more
information.
The system must write the Program Resume com-
mand to exit the Program Suspend mode and con-
tinue the programming operation. Further writes of the
Resume command are ignored. Another Program
Suspend command can be written after the device has
resume programming.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note:
See Tables
11
and
12
for program command
sequence.
相關(guān)PDF資料
PDF描述
AM29LV256ML123REI CAP, FILM, 0.22UF, 100V, PPS, 2825,5%,SM
AM29LV256M 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
Am29LV256MH113R 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH123RPGI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256ML123RFI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
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