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參數(shù)資料
| 型號： | AM29LV320DB120ED |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆位（4個M × 8位/ 2米x 16位），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 31/57頁 |
| 文件大?。?/td> | 636K |
| 代理商： | AM29LV320DB120ED |
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December 14, 2005
Am29LV320D
29
D A T A S H E E T
Command Definitions
Table 14.
Am29LV320D Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever happens
later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20–A12 uniquely select any sector.
Notes:
1.
2.
3.
See Table 1 for description of bus operations.
All values are in hexadecimal.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
Unless otherwise noted, address bits A20–A11 are don’t cares.
No unlock or command cycles required when device is in read
mode.
The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when a device is in the autoselect mode, or if DQ5 goes high
(while the device is providing status information).
The fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. See the
Autoselect
Command Sequence
section for more information.
4.
5.
6.
7.
8.
9.
10. The data is 00h for an unprotected sector and 01h for a protected
sector.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
12. The Unlock Bypass Reset command is required to return to the
read mode when the device is in the unlock bypass mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
14. The Erase Resume command is valid only during the Erase
Suspend mode.
The data is 99h for factory locked and 19h for not factory locked.
15. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Command
Sequence
(Note 1)
C
Bus Cycles (Notes 2–5)
Third
Addr
Data
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
555
AAA
555
AAA
555
Data
RD
F0
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
Reset (Note 7)
1
1
A
Manufacturer ID
Word
Byte
Word
Byte
Word
4
AA
2AA
555
2AA
555
2AA
55
555
AAA
555
AAA
555
90
X00
01
Device ID
4
AA
55
90
X01
X02
X03
(see
Table 6)
Secured Silicon
Factory Protect (Note
9)
4
AA
55
90
99/19
Byte
AAA
555
AAA
X06
Sector Protect Verify
(Note 10)
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
4
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
XXX
AA
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
PA
55
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
90
(SA)X02
(SA)X04
00/01
Enter
Secured Silicon Sector
3
AA
55
88
Exit
Secured Silicon
Sector
4
AA
55
90
XXX
00
Program
4
AA
55
A0
PA
PD
Unlock Bypass
3
AA
55
20
Unlock Bypass Program (Note 11)
2
2
A0
PD
Unlock Bypass Reset (Note 12)
XXX
555
AAA
555
AAA
XXX
XXX
55
AA
90
XXX
2AA
555
2AA
555
00
Chip Erase
Word
Byte
Word
Byte
6
AA
55
555
AAA
555
AAA
80
555
AAA
555
AAA
AA
2AA
555
2AA
555
55
555
AAA
10
Sector Erase
6
AA
55
80
AA
55
SA
30
Erase Suspend (Note 13)
Erase Resume (Note 14)
1
1
B0
30
CFI Query (Note 15)
Word
Byte
1
98
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV320DB120EF | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB120EI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB120EV | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB120EY | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB120WMD | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
| AM29LV320DB90EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
| AM29LV320DB90ED | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
| AM29LV320DB90EF | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
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