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參數(shù)資料
| 型號： | AM29LV320DB120EF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆位（4個M × 8位/ 2米x 16位），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 3/57頁 |
| 文件大?。?/td> | 636K |
| 代理商： | AM29LV320DB120EF |
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This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
23579
Issue Date:
December 14, 2005
Rev:
C
Amendment/
8
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV320D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Secured Silicon
— 64 Kbyte Sector Size; Replacement/substitute
devices (such as Mirrorbit
) have 256 bytes.
—
Factory locked and identifiable:
16 bytes (8 words)
available for secure, random factory Electronic Serial
Number; verifiable as factory locked through
autoselect function. ExpressFlash option allows
entire sector to be available for factory-secured data
—
Customer lockable:
Can be programmed once and
then permanently locked after being shipped from
AMD
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
Package options
— 48-pin TSOP
— 48-ball FBGA
Sector Architecture
— Eight 8 Kbyte sectors
— Sixty-three 64 Kbyte sectors
Top or bottom boot block
Manufactured on 0.23 μm process technology
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast 90 ns
— Program time: 7μs/word typical utilizing Accelerate
function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million erase cycles guaranteed per
sector
20 Year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
non-suspended sectors
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function provides accelerated
program times
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This product has been retired and is not available for designs. For new and current designs, S29AL032D supersedes Am29LV320D and is the factory-recommended migration path. Please
refer to the S29AL032D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV320DB120EI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB120EV | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB120EY | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB120WMD | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DB120WMF | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV320DB120EI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP |
| AM29LV320DB120WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA |
| AM29LV320DB90EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
| AM29LV320DB90ED | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
| AM29LV320DB90EF | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
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