參數(shù)資料
型號： AM29LV320DB40ED
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述： 32兆位（4個M × 8位/ 2米x 16位），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 12/57頁
文件大?。?/td> 636K
代理商： AM29LV320DB40ED
10
Am29LV320D
December 14, 2005
D A T A S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the com-
mands, along with the address and data information
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the in-
puts and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Table 1.
Am29LV320D Device Bus Operations
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 11.5–12.5
V, V
HH
= 11.5–12.5 V, X = Don’t Care, SA = Sector Address,
A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Addresses are A20:A0 in word mode (BYTE# = V
IH
), A20:A-1 in byte mode (BYTE# = V
IL
).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See “Sector/Sector
Block Protection and Unprotection” on page 17.
3. If WP#/ACC = V
IL
, the two outermost boot sectors remain protected. If WP#/ACC = V
IH
, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection” on page 17. If WP#/ACC = V
HH
, all sectors are unprotected.
4. D
IN
or D
OUT
as required by command sequence, data polling, or sector protection algorithm.
Operation
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Note 2)
DQ0–
DQ7
DQ8–DQ15
BYTE#
= V
IH
BYTE#
= V
IL
Read
L
L
H
H
L/H
A
IN
D
OUT
D
OUT
DQ8–DQ14
= High-Z,
DQ15 = A-1
Write
L
H
L
H
(Note 3)
A
IN
(Note 4) (Note 4)
Accelerated Program
L
H
L
H
V
HH
A
IN
(Note 4) (Note 4)
Standby
V
CC
±
0.3 V
X
X
V
CC
±
0.3 V
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
L/H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
L/H
X
High-Z
High-Z
High-Z
Sector Protect (Note 2)
L
H
L
V
ID
L/H
SA, A6 = L,
A1 = H, A0 = L
(Note 4)
X
X
Sector Unprotect
(Note 2)
L
H
L
V
ID
(Note 3)
SA, A6 = H,
A1 = H, A0 = L
(Note 4)
X
X
Temporary Sector
Unprotect
X
X
X
V
ID
(Note 3)
A
IN
(Note 4) (Note 4)
High-Z
相關(guān)PDF資料
PDF描述
AM29LV320DB40EF 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV320DB40EI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV320DB40EV 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV320DB40EY 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV320DB40WMC 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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AM29LV320DB90ED 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP
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