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參數(shù)資料
| 型號： | AM29LV320DT90R |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 32兆位（4個M × 8位/ 2米x 16位），3.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 26/55頁 |
| 文件大小： | 1258K |
| 代理商： | AM29LV320DT90R |
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26
Am29LV320D
November 15, 2004
Enter SecSi
TM
Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured
data area containing a random, sixteen-byte
electronic serial number (ESN). The system can
access the SecSi Sector region by issuing the
three-cycle Enter SecSi Sector command se-
quence. The device continues to access the
SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command se-
quence. The Exit SecSi Sector command se-
quence returns the device to normal operation.
Table 14, on page 29
shows the address and
data requirements for both command se-
quences. Note that the ACC function and unlock
bypass modes are not available when the de-
vice enters the SecSi Sector. See also
“SecSi
TM
Sector (Secured Silicon) Flash Memory Region”
on page 20
for further information.
Byte/Word Program Command Sequence
The system may program the device by word or
byte, depending on the state of the BYTE# pin.
Programming is a four-bus-cycle operation. The
program command sequence is initiated by
writing two unlock write cycles, followed by the
program set-up command. The program ad-
dress and data are written next, which in turn
initiate the Embedded Program algorithm. The
system is
not
required to provide further con-
trols or timings. The device automatically pro-
vides internally generated program pulses and
verifies the programmed cell margin.
Table 14,
on page 29
shows the address and data re-
quirements for the byte program command se-
quence.
Note that the autoselect, SecSi Sector,
and CFI modes are unavailable while a pro-
gramming operation is in progress.
When the Embedded Program algorithm is
complete, the device then returns to the read
mode and addresses are no longer latched. The
system can determine the status of the pro-
gram operation by using DQ7, DQ6, or RY/BY#.
Refer to
“Write Operation Status” on page 30
for information on these status bits.
Any commands written to the device during the
Embedded Program Algorithm are ignored.
Note that a
hardware reset
immediately ter-
minates the program operation. The program
command sequence should be reinitiated once
the device returns to the read mode, to ensure
data integrity.
Programming is allowed in any sequence and
across sector boundaries.
A bit cannot be
programmed from “0” back to a “1.”
At-
tempting to do so may cause the device to set
DQ5 = 1, or cause the DQ7 and DQ6 status bits
to indicate the operation was successful. How-
ever, a succeeding read shows that the data is
still “0.” Only erase operations can convert a
“0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to
program bytes or words to the device faster
than using the standard program command se-
quence. The unlock bypass command sequence
is initiated by first writing two unlock cycles.
This is followed by a third write cycle containing
the unlock bypass command, 20h. The device
then enters the unlock bypass mode. A two-cy-
cle unlock bypass program command sequence
is all that is required to program in this mode.
The first cycle in this sequence contains the un-
lock bypass program command, A0h; the sec-
ond cycle contains the program address and
data. Additional data is programmed in the
same manner. This mode dispenses with the
initial two unlock cycles required in the stan-
dard program command sequence, resulting in
faster total programming time.
Table 14, on
page 29
shows the requirements for the com-
mand sequence.
During the unlock bypass mode, only the Un-
lock Bypass Program and Unlock Bypass Reset
commands are valid. To exit the unlock bypass
mode, the system must issue the two-cycle un-
lock bypass reset command sequence. The first
cycle must contain the data 90h. The second
cycle need only contain the data 00h. The de-
vice then re turns to the read mode.
The device offers accelerated program opera-
tions through the WP#/ACC pin. When the sys-
tem asserts V
on the WP#/ACC pin, the
device automatically enters the Unlock Bypass
mode. The system may then write the two-cy-
cle Unlock Bypass program command se-
quence. The device uses the higher voltage on
the WP#/ACC pin to accelerate the operation.
Note that the WP#/ACC pin must not be at V
any operation other than accelerated program-
ming, or device damage may result. In addi-
tion, the WP#/ACC pin must not be left floating
or unconnected; inconsistent behavior of the
device may result.
Figure 4, on page 27
illustrates the algorithm
for the program operation. Refer to the table
“Erase and Program Operations” on page 41
for
parameters, and
Figure 18, on page 42
for tim-
ing diagrams.
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| Am29LV320DT90 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DT90EC | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| Am29LV320DT90ED | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| Am29LV320DT90EF | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| AM29LV320DT90EI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV320DT90WMI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin FBGA 制造商:Advanced Micro Devices 功能描述:NOR Flash, 2M x 16, 48 Pin, Plastic, BGA |
| AM29LV320MB100EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV320MB90RPCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 64BGA - Trays |
| AM29LV320MB90RWCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 48FBGA - Trays |
| AM29LV320ML101EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 100NS 56TSOP - Trays |
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