- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366502 > AM29LV320MT100EI (ADVANCED MICRO DEVICES INC) 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29LV320MT100EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PDSO48 |
| 封裝： | MO-142B, TSOP-48 |
| 文件頁數(shù)： | 44/61頁 |
| 文件大?。?/td> | 1395K |
| 代理商： | AM29LV320MT100EI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁當(dāng)前第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁
44
Am29LV320MT/B
May 16, 2003
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words (or 1–32 bytes) programmed.
4. Effective write buffer specification is based upon a 16-word (or 32-byte) write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
Parameter
Speed Options
JEDEC
Std.
Description
90R
100,
100R
110,
110R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
7.5
μs
Per Word
Typ
15
μs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
6.25
μs
Per Word
Typ
12.5
μs
Single Word/Byte Program
Operation (Note 2, 5)
Byte
Typ
60
μs
Word
60
μs
Accelerated Single Word/Byte
Programming Operation (Note 2, 5)
Byte
Typ
54
μs
Word
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
BUSY
WE# to RY/BY#
Min
90
100
110
120
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV320MB100PC | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MB100PCI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MB100RE | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MB100REI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MB100RPCI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV320MT90RPCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 64BGA - Trays |
| AM29LV320MT90RWCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 48FBGA - Trays |
| AM29LV400BB-120EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8/256K x 16 120ns 48-Pin TSOP |
| AM29LV400BB-120EI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 48-Pin TSOP |
| AM29LV400BB-120SC | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 44-Pin SOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。