參數(shù)資料
型號: Am29LV400BB70RWACB
廠商: Advanced Micro Devices, Inc.
英文描述: Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 6/7頁
文件大?。?/td> 47K
代理商: AM29LV400BB70RWACB
1/29/98
Am29LV400B
6
AD VAN C E I N F O RM AT I O N
Special Handling Instructions for Fine
PItch Ball Grid Array (FBGA)
Special handling is required for Flash Memory products
in FBGA packages.
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
T he pac k age an d/ or data int egr ity ma y be
compromised if the package body is exposed to
temperatures above 150
°C for prolonged periods of
time.
PIN CONFIGURATION
A0–A17
=
18 addresses
DQ0–DQ14 =
15 data inputs/outputs
DQ15/A-1
=
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
BYTE#
=
Selects 8-bit or 16-bit mode
CE#
=
Chip enable
OE#
=
Output enable
WE#
=
Write enable
RESET#
=
Hardware reset pin, active low
RY/BY#
=
Ready/Busy# output
VCC
=
3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
VSS
=
Device ground
NC
=
Pin not connected internally
LOGIC SYMBOL
21523A-4
18
16 or 8
DQ0–DQ15
(A-1)
A0–A17
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
相關(guān)PDF資料
PDF描述
Am29LV400BB70RWAE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400BB70RWAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV400BB70RWAC Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:22pF; Capacitance Tolerance:, -20%; Voltage Rating:100VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:1206; Termination:SMD RoHS Compliant: Yes
AM29LV400BT70RWAC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV400BT70RFC 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
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