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參數(shù)資料
| 型號： | Am29LV400T-90RWAE |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, +:50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, |
| 中文描述： | 4兆位（512畝x 8-Bit/256畝x 16位），3.0伏的CMOS只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 9/40頁 |
| 文件大小： | 516K |
| 代理商： | AM29LV400T-90RWAE |
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17
Am29LV400
PR EL IMIN AR Y
Table 5.
Am29LV400 Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A17–A12 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.
5. Address bits A17–A11 are don’t cares for unlock and
command cycles, except when SA or PA required.
6. No unlock or command cycles required when reading array
data.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is a
read cycle.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
10. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
11. The Erase Resume command is valid only during the Erase
Suspend mode.
Command
Sequence
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data Addr
Data
Addr Data
Addr
Data
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
Manufacturer ID
Word
4
555
AA
2AA
55
555
90
X00
01
Byte
AAA
555
AAA
Device ID,
Top Boot Block
Word
4
555
AA
2AA
55
555
90
X01
22B9
Byte
AAA
555
AAA
X02
B9
Device ID,
Bottom Boot Block
Word
4
555
AA
2AA
55
555
90
X01
22BA
Byte
AAA
555
AAA
X02
BA
Sector Protect Verify
Word
4
555
AA
2AA
55
555
90
(SA)
X02
XX00
XX01
Byte
AAA
555
AAA
(SA)
X04
00
01
Program
Word
4
555
AA
2AA
55
555
A0
PA
PD
Byte
AAA
555
AAA
Chip Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Byte
AAA
555
AAA
555
AAA
Sector Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Byte
AAA
555
AAA
555
Erase Suspend (Note 10)
1
XXX
B0
Erase Resume (Note 11)
1
XXX
30
Cy
c
les
Aut
ose
lec
t(N
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV400T-90RWAEB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV400T-90RWAC | Ceramic Multilayer Capacitor; Capacitance:100pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:100V; Dielectric Characteristic:NP0; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes |
| AM29LV400B-90RWAC | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV640DH90RZE | 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| Am29LV640DL90RZE | 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
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