- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366511 > AM29LV640DH101RZI (ADVANCED MICRO DEVICES INC) 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control PDF資料下載
參數(shù)資料
| 型號： | AM29LV640DH101RZI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| 中文描述： | 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | SSOP-56 |
| 文件頁數(shù)： | 24/57頁 |
| 文件大?。?/td> | 1467K |
| 代理商： | AM29LV640DH101RZI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁當前第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁
September 20, 2002
Am29LV640D/Am29LV641D
23
Table 7.
System Interface String
Table 8.
Device Geometry Definition
Addresses (x16)
Data
Description
1Bh
0027h
V
CC
Min. (write/erase)
D7
–
D4: volt, D3
–
D0: 100 millivolt
1Ch
0036h
V
CC
Max. (write/erase)
D7
–
D4: volt, D3
–
D0: 100 millivolt
1Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
0004h
Typical timeout per single byte/word write 2
N
μs
20h
0000h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
0000h
Max. timeout for buffer write 2
N
times typical
25h
0004h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses (x16)
Data
Description
27h
0017h
Device Size = 2
N
byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
007Fh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關PDF資料 |
PDF描述 |
|---|---|
| Am29LV640DU90RPCE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV640DU90RZE | 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| Am29LV641DU90RZE | 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| AM29LV640DH120RZE | 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| Am29LV641DH101REE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV640DH90REI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 90NS 48TSOP - Trays |
| AM29LV640DL90RZI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640DU-90NI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640DU90REI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 90NS 48TSOP - Trays |
| AM29LV640DU-90RWHIT | 制造商:Advanced Micro Devices 功能描述:63-BALL FINE-PITCH BALL GRID ARRAY (FBGA) 0.80 MM PITCH, 11 X 12 MM PACKAGE (FBE063) |
發(fā)布緊急采購，3分鐘左右您將得到回復。