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參數(shù)資料
| 型號(hào)： | AM29LV640MB90REF |
| 廠(chǎng)商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 64兆位（4個(gè)M x 16位/八米× 8位）的MirrorBit⑩3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 57/66頁(yè) |
| 文件大?。?/td> | 836K |
| 代理商： | AM29LV640MB90REF |
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February1,2007 26190C8
Am29LV640MT/B
55
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See
Erase And Programming Performance on page 57
for more information.
3. For 1–16 words programmed/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. When using the program suspend/resume feature, if the suspend command is issued within t
POLL
, t
POLL
must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after t
POLL
, t
POLL
is not required again prior to
reading the status bits upon resuming.
Parameter
Description
Speed Options
JEDEC
Std.
90R
100,
100R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes
2
,
3
)
Typ
352
μs
Effective Write Buffer Program
Operation (Notes
2
,
4
)
Per Byte
Typ
11
μs
Per Word
Typ
22
μs
Accelerated Effective Write Buffer
Program Operation (Notes
2
,
4
)
Per Byte
Typ
8.8
μs
Per Word
Typ
17.6
μs
Single Word/Byte Program
Operation
(Note 2)
Byte
Typ
100
μs
Word
100
Accelerated Single Word/Byte
Programming Operation
(Note 2)
Byte
Typ
90
μs
Word
90
t
WHWH2
t
WHWH2
Sector Erase Operation
(Note 2)
Typ
0.5
sec
t
RH
RESET High Time Before Write
(Note 1)
Min
50
ns
t
POLL
Program Valid Before Status Polling
(Note 6)
Max
4
μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV640MB90REI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MB90RPCF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MB90RPCI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MB90RWHF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MB90RWHI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV640MB-90REI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640MH112REI | 制造商:Advanced Micro Devices 功能描述:4M X 16 FLASH 3V PROM, 110 ns, PDSO56 |
| AM29LV640MU101RPCI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640MU90NI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640MU90RPC1 | 制造商:Advanced Micro Devices 功能描述: |
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