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參數(shù)資料
| 型號： | AM29LV640MT |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 64兆位（4個M x 16位/八米× 8位）的MirrorBit⑩3.0伏，只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 50/66頁 |
| 文件大?。?/td> | 836K |
| 代理商： | AM29LV640MT |
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48
Am29LV640MT/B
26190C8 February1,2007
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1.
2.
Not 100% tested.
See
Erase And Programming Performance on page 57
for more
information.
For 1–16 words/ 1–32 bytes programmed.
Effective write buffer specification is based upon a 16-word/
32-byte write buffer operation.
3.
4.
5.
Word/Byte programming specification is based upon a single
word/byte programming operation not utilizing the write buffer.
When using the program suspend/resume feature, if the suspend
command is issued within t
POLL
, t
POLL
must be fully re-applied
upon resuming the programming operation. If the suspend
command is issued after t
, t
is not required again prior to
reading the status bits upon resuming.
6.
Parameter
Speed Options
JEDEC
Std.
Description
90R
100,
100R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes
2
,
3
)
Typ
352
μs
Effective Write Buffer Program
Operation (Notes
2
,
4
)
Per Byte
Typ
11
μs
Per Word
Typ
22
μs
Accelerated Effective Write Buffer
Program Operation (Notes
2
,
4
)
Per Byte
Typ
8.8
μs
Per Word
Typ
17.6
μs
Single Word/Byte Program
Operation (Note
2
,
5
)
Byte
Typ
100
μs
Word
100
Accelerated Single Word/Byte
Programming Operation (Note
2
,
5
)
Byte
Typ
90
μs
Word
90
t
WHWH2
t
WHWH2
Sector Erase Operation
(Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time
(Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time
(Note 1)
Min
50
μs
t
BUSY
WE# High to RY/BY# Low
Max
90
100
110
120
ns
t
POLL
Program Valid Before Status Polling
(Note 6)
Max
4
μs
相關PDF資料 |
PDF描述 |
|---|---|
| AM29LV640MT100EF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
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| AM29LV640MT100PCF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT100PCI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT100REF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
相關代理商/技術參數(shù) |
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|---|---|
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| AM29LV640MU90RPCI | 制造商:Advanced Micro Devices 功能描述: |
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