參數(shù)資料
型號(hào)： Am29LV641DL121RWHIN
廠(chǎng)商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述： 64兆位（4個(gè)M x 16位），3.0伏的CMOS只均勻部門(mén)閃光控制記憶與VersatileI
文件頁(yè)數(shù)： 56/57頁(yè)
文件大?。?/td> 1467K
代理商： AM29LV641DL121RWHIN
September 20, 2002
Am29LV640D/Am29LV641D
55
REVISION SUMMARY
Revision A (April 26, 1999)
Initial release.
Revision A+1 (May 4, 1999)
Global
Deleted references to the 4-word unique ESN. Re-
placed references to V
CCQ
with V
IO
.
Connection Diagrams
63-ball FBGA:
Corrected signal for ball H7 to V
IO
.
Ordering Information
Added
“
U
”
designator description.
SecSi (Secured Silicon) Sector Flash Memory
Region
In the third paragraph, replaced references to boot
sectors with SA0. Added table to show SecSi sector
contents.
DC Characteristics table
Added V
IO
= V
CC
as a test condition for I
CC1
and I
CC2
.
Changed V
HH
minimum specification from 8.5 V to
11.5 V.
Revision A+2 (May 14, 1999)
Ordering Information
Clarified the differences between the H, L, and U
designators.
Revision A+3 (June 7, 1999)
Product Selector Guide
Added note under table.
Ordering Information
Deleted the
“
0
”
from the 120 and 150 ns part numbers.
Corrected the FBGA package marking for the 150 ns
speed option.
Revision A+4 (June 25, 1999)
Global
Information on the 56-pin SSOP package has been
added: pinout information and physical dimension
drawings.
Command Definitions
Corrected the data for SecSi Sector protection in Note
9. Added device ID data to the table.
Revision A+5 (August 2, 1999)
Block Diagram
Separated WP# and ACC.
Ordering Information
Added the valid combinations for the SSOP package.
Revision A+6 (September 28, 1999)
Connection Diagrams
Clarified which packages are available for a particular
part number.
Device Bus Operations
VersatileIO
Control:
Added comment to contact AMD
for more information on this feature.
DC Characteristics
CMOS Compatible table:
Added notes (1 and 2) for I
LI
and test conditions column.
Test Conditions
In Test Specifications table and Input Waveforms and
Meaurement Levels figure, changed the output mea-
surement level to V
IO
/2.
AC Characteristics
Read-only Operations table:
Added note for test setup
column.
Revision B (June 20, 2000)
Global
Deleted references to 150 ns speed option. Added
more information and specifications on V
IO
feature, in-
cluding part number distinctions. At V
IO
< V
CC
, the
available speed options are 100 ns and 120 ns. At V
IO
≥
V
CC
, the available speed options are 90 ns and 120
ns. Changed data sheet status to
“
Preliminary.
”
Distinctive Characteristics
Clarified on which devices RY/BY# and WP# are avail-
able. Clarified package options for devices.
Ordering Information
Clarified on which devices RY/BY# and WP# are avail-
able. Clarified package options for devices. Reinstated
“
0
”
into the 120 ns speed part number for V
IO
= 3.0 V
to 5.0 V; added part numbers for V
IO
= 1.8 V to 2.9 V.
Device Bus Operations table
In the legend, corrected the V
HH
voltage range.
SecSi Sector Contents table
Corrected ending address in second row to 7Fh.
DC Characteristics table
Redefined V
OH1
and V
OH2
in terms of V
IO
. Added note
relative to V
IO
for V
IH
and V
IL
. Deleted note regarding
test condition assumption of V
IO
= V
CC
.
相關(guān)PDF資料
PDF描述
AM29LV640DU121RWHIN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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