參數(shù)資料
型號(hào)： Am29LV641DU101REIN
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述： 64兆位（4個(gè)M x 16位），3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁(yè)數(shù)： 36/57頁(yè)
文件大?。?/td> 1467K
代理商： AM29LV641DU101REIN
September 20, 2002
Am29LV640D/Am29LV641D
35
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. On the WP# pin only, the maximum input load current when WP# = V
IL
is ± 5.0 μA.
2. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
3. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
4. I
CC
active while Embedded Erase or Embedded Program is in progress.
5. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode current is
200 nA.
6. If V
IO
< V
CC
, maximum V
IL
for CE# and DQ I/Os is 0.3 V
IO
. If V
IO
< V
CC
, minimum V
IH
for CE# and DQ I/Os is 0.7 V
IO
. Maximum V
IH
for these connections is V
IO
+ 0.3 V
7. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current (Note 1)
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
V
CC
= V
CC max
; A9 = 12.5 V
±
1.0
μA
I
LIT
A9, ACC Input Load Current
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Notes 2, 3)
CE# = V
IL,
OE#
=
V
IH
5 MHz
9
16
mA
1 MHz
2
4
I
CC2
V
CC
Active Write Current (Notes 3, 4) CE# = V
IL,
OE#
=
V
IH
, WE# = V
IL
26
30
mA
I
CC3
V
CC
Standby Current (Note 3)
CE#, RESET# = V
CC
±
0.3 V,
WP# = V
IH
RESET# = V
SS
±
0.3 V, WP# = V
IH
V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V, WP# = V
IH
0.2
5
μA
I
CC4
V
CC
Reset Current (Note 3)
0.2
5
μA
I
CC5
Automatic Sleep Mode (Notes 3, 5)
0.2
5
μA
I
ACC
ACC Accelerated Program Current
CE# = V
IL
, OE# = V
IH
ACC pin
5
10
mA
V
CC
pin
15
30
mA
V
IL
V
IH
Input Low Voltage (Note 6)
–
0.5
0.8
V
Input High Voltage (Note 6)
0.7 x V
CC
V
CC
+ 0.3
V
V
HH
Voltage for ACC Program
Acceleration
V
CC
= 3.0 V ± 10%
11.5
12.5
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 3.0 V
±
10%
8.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, V
CC
= V
CC min
0.45
V
V
OH1
V
OH2
V
LKO
Output High Voltage
I
OH
=
–
2.0 mA, V
CC
= V
CC min
I
OH
=
–
100 μA, V
CC
= V
CC min
0.8 V
IO
V
IO
–
0.4
2.3
V
V
Low V
CC
Lock-Out Voltage (Note 7)
2.5
V
相關(guān)PDF資料
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Am29LV641DU101RFE 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV641DU101RFEN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV641DU101RFI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV641DU101RFIN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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