參數(shù)資料
型號: Am29LV641DU101RPCEN
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述: 64兆位(4個M x 16位),3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù): 48/57頁
文件大?。?/td> 1467K
代理商: AM29LV641DU101RPCEN
September 20, 2002
Am29LV640D/Am29LV641D
47
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the
Erase And Programming Performance
section for more information.
Parameter
Speed Options
JEDEC
Std
Description
90R
101R
120R,
121R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
45
50
ns
t
DVEH
t
DS
Data Setup Time
Min
45
45
50
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
45
50
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Word Programming Operation (Note 2)
Typ
11
μs
t
WHWH1
t
WHWH1
Accelerated Word Programming Operation
(Note 2)
Typ
7
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.9
sec
相關(guān)PDF資料
PDF描述
Am29LV641DU101RPCI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV641DU101RPCIN POT 100 OHM 3/4 RECT CERM MT
Am29LV641DU101RWHE POT 100 OHM 3/4 RECT CERM MT
Am29LV641DU101RWHEN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV641DU101RWHI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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