參數(shù)資料
型號： Am29LV641DU101RZE
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述： 64兆位（4個M x 16位），3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù)： 43/57頁
文件大小： 1467K
代理商： AM29LV641DU101RZE
42
Am29LV640D/Am29LV641D
September 20, 2002
AC CHARACTERISTICS
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see
“
Write Operation Status
”
.
2. These waveforms are for the word mode.
Figure 17.
Chip/Sector Erase Operation Timings
相關PDF資料
PDF描述
Am29LV641DU101RZEN POT 100K OHM 3/4 RECT CERM MT
Am29LV641DU101RZI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DH121RFE 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
AM29LV641DH121RFE 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DL121RFE 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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