參數(shù)資料
型號(hào): Am29LV641DU121RZEN
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
中文描述: 64兆位(4個(gè)M x 16位),3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI
文件頁數(shù): 29/57頁
文件大?。?/td> 1467K
代理商: AM29LV641DU121RZEN
28
Am29LV640D/Am29LV641D
September 20, 2002
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The address
of the erase-suspended sector is required when writ-
ing this command. Further writes of the Resume com-
mand are ignored. Another Erase Suspend command
can be written after the chip has resumed erasing.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 10 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
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Am29LV641DH101RZI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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Am29LV641DL101RZI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640DU101RZI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
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