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參數(shù)資料
| 型號： | AM29LV652DU12RMAF |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control |
| 中文描述： | 16M X 8 FLASH 3V PROM, 120 ns, PBGA63 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63 |
| 文件頁數(shù)： | 27/55頁 |
| 文件大?。?/td> | 1181K |
| 代理商： | AM29LV652DU12RMAF |
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October 29, 2004
Am29LV652D
25
P R E L I M I N A R Y
Table 9.
Primary Vendor-Specific Extended Query
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations.
Table 10, on page 30
defines the valid
register command sequences. Writing
incorrect
ad-
dress and data values
or writing them in the
im-
proper sequence
resets the device to reading array
data.
All addresses are latched on the falling edge of WE#
or CE# (or CE2#), whichever happens later. All data is
latched on the rising edge of WE# or CE# (or CE2#),
whichever happens first. Refer to
“AC Characteristics”
on page 39
for timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
non-erase-suspended sector. After completing a pro-
gramming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See
“Erase Suspend/Erase Resume Com-
mands” on page 28
for more information.
The system
must
issue the reset command to return
the device to the read (or erase-suspend-read) mode
if DQ5 goes high during an active program or erase
operation, or if the device is in the autoselect mode.
Addresses (x8)
Data
Description
40h
41h
42h
50h
52h
49h
Query-unique ASCII string “PRI”
43h
31h
Major version number, ASCII
44h
31h
Minor version number, ASCII
45h
01h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h
02h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
04h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
01h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
04h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
00h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
00h
Page Mode Type
00 = Not Supported
4Dh
B5h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh
C5h
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh
00h
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
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