參數(shù)資料
型號： AM29LV652DU90RMAE
廠商： Spansion Inc.
英文描述： TVS 5.6V 0.1J 15V-CV 1-ELEMENT SMD-0805 SN100 TR-7-PL
中文描述： 128兆位（16米× 8位）的CMOS 3.0伏特，只有統(tǒng)一部門閃光控制記憶與VersatileIO
文件頁數(shù)： 36/55頁
文件大?。?/td> 1181K
代理商： AM29LV652DU90RMAE
34
Am29LV652D
October 29, 2004
P R E L I M I N A R Y
Table 11.
Write Operation Status
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
Status
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
Standard
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Suspend
Mode
Erase-Suspend-
Read
Erase
Suspended Sector
Non-Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
相關(guān)PDF資料
PDF描述
AM29LV652DU90RMAF Varistor; Package/Case:0805; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.6V; Output Current Max:1A; Output Voltage Max:18V
AM29LV652DU90RMAI Varistor; Package/Case:0805; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:14V; Output Current Max:0.75A; Output Voltage Max:32V
AM29PDLI27H63PCI 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDLI27H63PCIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDLI27H88PCIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
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