參數(shù)資料
型號: Am29LV800BT-120DP5I1
廠商: Advanced Micro Devices, Inc.
英文描述: Toggle Switch; Circuitry:DPST; Switch Operation:On-On-On; Contact Current Max:15A; Actuator Style:Flat Lever; Switch Terminals:Solder Lug; Current Rating:15A; Leaded Process Compatible:Yes; Mounting Type:Panel RoHS Compliant: Yes
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),3.0伏的CMOS只,引導扇區(qū)快閃記憶體模修訂1
文件頁數(shù): 1/9頁
文件大小: 80K
代理商: AM29LV800BT-120DP5I1
SUPPLEMENT
Publication#
21356
Issue Date:
March 1998
Rev:
B
Amendment/
+1
Am29LV800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 2.7 to 3.6 V for read, program, and erase
operations
— Ideal for battery-powered applications
I
Manufactured on 0.35
μ
m process technology
I
High performance
— 90 or 120 ns access time
I
Low power consumption (typical values at 5
MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
I
Top or bottom boot block configurations
available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
相關PDF資料
PDF描述
AM29LV800DB-120EI Time-Delay Relay; Time Range:1 sec. to 480 sec.; Mounting Type:Plug In; Timing Function:Delay-On-Make; Relay Mounting:Plug-In; Supply Voltage AC, Max:288V; Supply Voltage AC, Min:19V; Supply Voltage DC, Max:288V RoHS Compliant: Yes
AM29LV800DB-120 Time-Delay Relay; Contacts:SPST-NO; Time Range:; Mounting Type:Plug In; Timing Function:Interval Single-Shot; Leaded Process Compatible:Yes; Load Current Max:5A; Relay Mounting:Plug-In; Supply Voltage:115VAC; Time Range Max:300s RoHS Compliant: Yes
AM29LV800DB-120EC Time-Delay Relay; Time Range:0.1 sec. to 30 sec.; Mounting Type:Plug-In; Timing Function:Delay-On-Make; Supply Voltage:115V RoHS Compliant: Yes
AM29LV800DB-120ED Time-Delay Relay; Time Range:0.1 sec. to 30 sec.; Mounting Type:Plug In; Timing Function:Delay-On-Make; Relay Mounting:Plug-In; Supply Voltage AC, Max:230V; Supply Voltage AC, Min:115V; Supply Voltage DC, Max:230V RoHS Compliant: Yes
AM29LV800DB-120EF Time-Delay Relay; Time Range:0.1 - 30; Timing Function:Delay-On-Make; Time Range Max:30s; Time Range Min:0.1s
相關代理商/技術參數(shù)
參數(shù)描述
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AM29LV800DB-70EF 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP
AM29LV800DB-90EC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP