參數資料
型號: AM29LV800BT70REEB
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: MO-142DD, TSOP-48
文件頁數: 37/42頁
文件大小: 571K
代理商: AM29LV800BT70REEB
Am29LV800B
37
P R E L I M I N A R Y
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, D
OUT
= data written to the
device.
2. Figure indicates the last two bus cycles of command sequence.
3. Word mode address used as an example.
21490E-28
Figure 24.
Alternate CE# Controlled Write Operation Timings
相關PDF資料
PDF描述
Am29LV800BT70REIB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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AM29LV800DB-120WCC Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 180pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
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