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參數(shù)資料
| 型號： | AM29PDL127H83PCIN |
| 廠商： | Spansion Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 128兆位（8米× 16位），3.0伏的CMOS只，頁面模式同步讀/寫閃存與增強VersatileIO控制記憶 |
| 文件頁數(shù)： | 23/68頁 |
| 文件大?。?/td> | 750K |
| 代理商： | AM29PDL127H83PCIN |
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ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 26864 Rev: A Amendment/+4
Issue Date: June 30, 2003
Am29PDL127H
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write
Flash Memory with Enhanced VersatileIOTM Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ 128 Mbit Page Mode device
— Page size of 8 words: Fast page read access from random
locations within the page
■ Single power supply operation
— Full Voltage range: 2.7 to 3.6 volt read, erase, and program
operations for battery-powered applications
■ Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency switching from write to read operations
■ FlexBank Architecture
— 4 separate banks, with up to two simultaneous operations
per device
— Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
— Bank B: 48 Mbit (32 Kw x 96)
— Bank C: 48 Mbit (32 Kw x 96)
— Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
■ Enhanced VersatileI/OTM (V
IO) Control
— Output voltage generated and input voltages tolerated on all
control inputs and I/Os is determined by the voltage on the
V
IO pin
—V
IO options at 1.8 V and 3 V I/O
■ SecSiTM (Secured Silicon) Sector region
— Up to 128 words accessible through a command sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
■ Both top and bottom boot blocks in one device
■ Manufactured on 0.13 m process technology
■ 20-year data retention at 125°C
■ Minimum 1 million erase cycle guarantee per sector
PERFORMANCE CHARACTERISTICS
■ High Performance
— Page access times as fast as 20 ns
— Random access times as fast as 55 ns
■ Power consumption (typical values at 10 MHz)
— 55 mA active read current
— 25 mA program/erase current
— 1 A typical standby mode current
SOFTWARE FEATURES
■ Software command-set compatible with JEDEC 42.4
standard
— Backward compatible with Am29F and Am29LV families
■ CFI (Common Flash Interface) complaint
— Provides device-specific information to the system, allowing
host software to easily reconfigure for different Flash devices
■ Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or program
operations in other sectors of same bank
■ Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data
■ WP#/ ACC (Write Protect/Acceleration) input
—At V
IL, hardware level protection for the first and last two 4K
word sectors.
—At V
IH, allows removal of sector protection
—At V
HH, provides accelerated programming in a factory
setting
■ Persistent Sector Protection
— A command sector protection method to lock combinations
of individual sectors and sector groups to prevent program or
erase operations within that sector
— Sectors can be locked and unlocked in-system at V
CC level
■ Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
■ Package options
— 64-ball Fortified BGA
— 80-ball Fine-pitch BGA
— Multi Chip Packages (MCP)
相關(guān)PDF資料 |
PDF描述 |
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| AM29PDL127H83VKIN | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL127H85PCI | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL127H85PCIN | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL127H85VKI | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL127H85VKIN | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
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