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參數(shù)資料
| 型號(hào)： | AM29PDLI27H53VKIN |
| 廠商： | Spansion Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 128兆位（8米× 16位），3.0伏的CMOS只，頁(yè)面模式同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁(yè)數(shù)： | 15/68頁(yè) |
| 文件大?。?/td> | 750K |
| 代理商： | AM29PDLI27H53VKIN |
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June 30, 2003
Am29PDL127H
13
A D V A N C E I N F O R M A T I O N
(Note that this is a more restricted voltage range than
V
IH
.) If CE# and RESET# are held at V
IH
, but not within
V
IO
± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device re-
quires standard access time (t
CE
) for read access
when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
I
CC3
in the
DC Characteristics
table represents the
CMOS standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
this mode when addresses remain stable for t
ACC
+
150 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when ad-
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
Note that during automatic sleep mode, OE# must be
at V
IH
before the device reduces current to the stated
sleep mode specification. I
CC5
in the
DC Characteris-
tics
table represents the automatic sleep mode current
specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of t
RP
, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
SS
±0.3 V, the device
draws CMOS standby current (I
CC4
). If RESET# is held
at V
IL
but not within V
SS
±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase op-
eration, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t
READY
(during Embedded Algorithms). The
system can thus monitor RY/BY# to determine
whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not ex-
ecuting (RY/BY# pin is “1”), the reset operation is com-
pleted within a time of t
READY
(not during Embedded
Algorithms). The system can read data t
RH
after the
RESET# pin returns to V
IH
.
Refer to the
AC Characteristic
tables for RESET# pa-
rameters and to Figure 14 for the timing diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is
disabled. The output pins (except for RY/BY#) are
placed in the highest Impedance state
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