參數(shù)資料
型號: AM29PDLI27H83PCI
廠商: Spansion Inc.
英文描述: 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述: 128兆位(8米× 16位),3.0伏的CMOS只,頁面模式同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶
文件頁數(shù): 50/68頁
文件大?。?/td> 750K
代理商: AM29PDLI27H83PCI
48
Am29PDL127H
June 30, 2003
A D V A N C E I N F O R M A T I O N
TEST CONDITIONS
Table 16.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 10.
Test Setup
Test Condition
All Speeds
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
70
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 11.
Input Waveforms and Measurement Levels
相關(guān)PDF資料
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AM29PDLI27H83PCIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
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AM29PDLI27H83VKIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
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AM29PDLI27H88VKIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
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