參數(shù)資料
型號(hào): AM29PDLI27H83PCIN
廠商: Spansion Inc.
英文描述: 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述: 128兆位(8米× 16位),3.0伏的CMOS只,頁(yè)面模式同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶
文件頁(yè)數(shù): 6/68頁(yè)
文件大?。?/td> 750K
代理商: AM29PDLI27H83PCIN
4
Am29PDL127H
June 30, 2003
A D V A N C E I N F O R M A T I O N
Figure 21. DQ2 vs. DQ6.................................................................. 56
Temporary Sector Unprotect ..................................................57
Figure 22. Temporary Sector Unprotect Timing Diagram............... 57
Figure 23. Sector/Sector Block Protect and
Unprotect Timing Diagram.............................................................. 58
Alternate CE# Controlled Erase and Program Operations .....59
Figure 24. Alternate CE# Controlled Write (Erase/Program)
OperationTimings........................................................................... 60
Erase And Programming Performance . . . . . . . 61
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 61
BGA Pin Capacitance. . . . . . . . . . . . . . . . . . . . . . 61
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 62
LAA064—64-Ball Fortified Ball Grid Array 13x11mmpackage
62
VBB080—80-Ball Fine-pitch Ball Grid Array 11.5x9
mmpackage ...........................................................................63
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 64
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