參數(shù)資料
型號: AM29PL160CB-120EI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
中文描述: 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝: TSOP-48
文件頁數(shù): 20/44頁
文件大?。?/td> 987K
代理商: AM29PL160CB-120EI
June 12, 2002
Am29PL160C
19
pend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the device has resumed erasing.
Temporary Unprotect Enable/Disable
Command Sequence
The temporary unprotect command sequence is a
four-bus-cycle operation. The sequence is initiated by
writing two unlock write cycles. A third write cycle sets
up the command. The fourth and final write cycle en-
ables or disables the temporary unprotect feature. If
the temporary unprotect feature is enabled, all sectors
are temporarily unprotected. The system may program
or erase data as needed. When the system writes the
temporary unprotect disable command sequence, all
sectors return to their previous protected or unpro-
tected settings. See Table 10 for more information.
Notes:
1. See Table 10 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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AM29PL160CB-120SI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-120SKI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-65R 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-65REI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
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