參數(shù)資料
型號(hào)： AM29PL160CB-120SKI
廠商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
中文描述： 1M X 16 FLASH 3V PROM, 120 ns, PDSO44
封裝： REVERSE, MO-180A, SO-44
文件頁(yè)數(shù)： 2/44頁(yè)
文件大?。?/td> 987K
代理商： AM29PL160CB-120SKI
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
22143
Issue Date:
June 12, 2002
Rev:
C
Amendment/
+4
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29PL160C
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
■
16 Mbit Page Mode device
— Byte (8-bit) or word (16-bit) mode selectable via
BYTE# pin
— Page size of 16 bytes/8 words: Fast page read
access from random locations within the page
■
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
■
5 V-tolerant data, address, and control signals
■
High performance read access times
— Page access times as fast as 25 ns at industrial
temperature range
— Random access times as fast as 65 ns
■
Power consumption (typical values at 5 MHz)
— 30 mA read current
— 20 mA program/erase current
— 1 μA standby mode current
— 1 μA Automatic Sleep mode current
■
Flexible sector architecture
— Sector sizes: One 16 Kbyte, two 8 Kbyte, one
224 Kbyte, and seven sectors of 256 Kbytes
each
— Supports full chip erase
■
Bottom boot block configuration only
■
Sector Protection
— A hardware method of locking a sector to prevent
any program or erase operations within that
sector
— Sectors can be locked via programming
equipment
— Temporary Sector Unprotect command
sequence allows code changes in previously
locked sectors
■
Minimum 1 million write cycles guarantee
per sector
■
20-year data retention
■
Manufactured on 0.32 μm process technology
■
Software command-set compatible with JEDEC
standard
— Backward compatible with Am29F and Am29LV
families
■
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
■
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■
Package Options
— 44-pin SO (mask-ROM compatible pinout)
— 48-pin TSOP
相關(guān)PDF資料
PDF描述
AM29PL160CB-65R 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-65REI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-65RSI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-65RSKI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-70R 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
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