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參數(shù)資料
| 型號： | AM29PL160CB-65RSKI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 65 ns, PDSO44 |
| 封裝： | REVERSE, MO-180A, SO-44 |
| 文件頁數(shù)： | 11/44頁 |
| 文件大?。?/td> | 987K |
| 代理商： | AM29PL160CB-65RSKI |
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10
Am29PL160C
June 12, 2002
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V
IL
, and OE# to V
IH
.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes
or words. Refer to “Word/Byte Configuration” for
more information.
The device features an
Unlock Bypass
mode to facili-
tate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required
to program a word or byte, instead of four. The
“Word/Byte Program Command Sequence” section has
details on programming data to the device using both
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Table 4 indicates the address
space that each sector occupies. A “sector address”
consists of the address bits required to uniquely select
a sector. The “Command Definitions” section has de-
tails on erasing a sector or the entire chip, or
suspending/resuming the erase operation.
After the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal
register (which is separate from the memory array) on
DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.
I
CC2
in the DC Characteristics table represents the ac-
tive current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and
I
CC
read specifications apply. Refer to “Write Opera-
tion Status” for more information, and to “AC
Characteristics” for timing diagrams.
Standby Mode
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# pin is both held at V
CC
±
0.3 V. (Note that this is a
more restricted voltage range than V
IH
.) If CE# is held
at V
IH
, but not within V
CC
±
0.3 V, the device will be in
the standby mode, but the standby current will be
greater. The device requires standard access time
(t
CE
) for read access when the device is in either of
these standby modes, before it is ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables this
mode when addresses remain stable for tACC + 30 ns.
The automatic sleep mode is independent of the CE#,
WE#, and OE# control signals. Standard address access
timings provide new data when addresses are changed.
While in sleep mode, output data is latched and always
available to the system. Note that during Automatic Sleep
mode, OE# must be at VIH before the device reduces
current to the stated sleep mode specification.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is
disabled. The output pins are placed in the high imped-
ance state.
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