參數(shù)資料
型號： AM29PL160CB-70R
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
中文描述： 16兆位（2米× 8位/ 1個(gè)M x 16位）的CMOS 3.0伏，不僅具備高性能頁面模式閃存
文件頁數(shù)： 38/44頁
文件大小： 987K
代理商： AM29PL160CB-70R
June 12, 2002
Am29PL160C
37
AC CHARACTERISTICS
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, D
OUT
= data written to the
device.
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
t
GHEL
t
WS
OE#
CE#
WE#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
WHWH1 or 2
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Figure 20.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
AM29PLI60C 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB90SI High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125
AM29PL160CB-70REI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-70RSI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29PL160CB-70RSKI WASHER
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