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參數(shù)資料
| 型號(hào)： | AM29SL160CB-100EEN |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| 中文描述： | 16兆位的CMOS 1.8伏只超低電壓快閃記憶體 |
| 文件頁數(shù)： | 20/52頁 |
| 文件大小： | 1232K |
| 代理商： | AM29SL160CB-100EEN |
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20
Am29SL160C
November 1, 2004
Figure 2.
Temporary Sector Unprotect Operation
Secured Silicon (SecSi) Sector Flash
Memory Region
The Secured Silicon (SecSi) Sector is a flash memory
region that enables permanent part identification
through an Electronic Serial Number (ESN). The SecSi
Sector in this device is 256 bytes in length. The device
contains a SecSi Sector indicator bit that allows the
system to determine whether or not the SecSi Sector
was factory locked. This indicator bit is permanently set
at the factory and cannot be changed, which prevents
a factory-locked part from being cloned.
AMD offers this device only with the SecSi Sector
factory serialized and locked. The first sixteen bytes of
the SecSi Sector contain a random ESN. To utilize the
remainder SecSi Sector space, customers must
provide their code to AMD through AMD’s Express
Flash service. The factory will program and perma-
nently protect the SecSi Sector (in addition to
programming and protecting the remainder of the
device as required).
The system can read the SecSi Sector by writing the
Enter SecSi Sector command sequence (see
“Enter
SecSi Sector/Exit SecSi Sector Command Sequence”
on page 24
).
Table 7, on page 20
shows the layout for
the SecSi Sector.
Table 7.
SecSi Sector Addresses
The device continues to read from the SecSi Sector
until the system issues the Exit SecSi Sector command
sequence, or until power is removed from the device.
On power-up, or following a hardware reset, the device
reverts to sending commands to the boot sectors.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to
Table 12, on
page 28
for command definitions). In addition, the fol-
lowing hardware data protection measures prevent
accidental erasure or programming, which might other-
wise be caused by spurious system level signals during
V
CC
power-up and power-down transitions, or from
system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not accept
any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
START
Perform Erase or
Program Operations
RESET# = V
IH
Temporary Sector
Unprotect Completed
(Note 2)
RESET# = V
ID
(Note 1)
Notes:
1. All protected sectors unprotected. (If WP#/ACC = V
IL
,
the outermost sectors remain protected)
2. All previously protected sectors are protected once
again.
Description
Address Range
Word Mode
(x16)
Byte Mode (x8)
16-byte random ESN
00–07h
000–00Fh
User-defined code or
factory erased (all 1s)
08–7Fh
010–0FFh
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| AM29SL160CB-100EFN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CB-100EIN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
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| AM29SL160CB-100WCDN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CB-100WCEN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
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