參數(shù)資料
型號(hào): AM29SL160CB-100WCDN
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 16兆位的CMOS 1.8伏只超低電壓快閃記憶體
文件頁數(shù): 37/52頁
文件大?。?/td> 1232K
代理商: AM29SL160CB-100WCDN
November 1, 2004
Am29SL160C
37
AC CHARACTERISTICS
Read Operations
Notes:
1. Not 100% tested.
2. See
Figure 11, on page 36
and
Table 14, on page 36
for
test specifications.
.
Parameter
Description
Speed Option
JEDEC
Std
Test Setup
-90
-100
-120
-150
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
90
100
120
150
ns
t
AVQV
t
ACC
Address to Output Delay
CE# = V
IL
OE# = V
IL
Max
90
100
120
150
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
90
100
120
150
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
35
35
50
65
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
OEH
Output Enable
Hold Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE#
or OE#, Whichever Occurs First (Note 1)
Min
0
ns
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
OE
0 V
RY/BY#
RESET#
t
DF
t
OH
Figure 13.
Read Operations Timings
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