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參數(shù)資料
| 型號： | AM29SL160CT-90ECN |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| 中文描述： | 16兆位的CMOS 1.8伏只超低電壓快閃記憶體 |
| 文件頁數(shù)： | 23/52頁 |
| 文件大?。?/td> | 1232K |
| 代理商： | AM29SL160CT-90ECN |
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November 1, 2004
Am29SL160C
23
Table 11.
Primary Vendor-Specific Extended Query
COMMAND DEFINITIONS
Writing specific address and data commands or
sequences into the command register initiates device
operations.
Table 12, on page 28
defines the valid reg-
ister command sequences. Writing
incorrect
address
and data values
or writing them in the
improper
sequence
resets the device to reading array data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in
“AC
Characteristics” on page 37
.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or
Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The
system can read array data using the standard read
timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See
“Erase
Suspend/Erase Resume Commands” on page 26
for
more information on this mode.
The system
must
issue the reset command to re-
enable the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See
“Reset Com-
mand”
, next.
See also
“Requirements for Reading Array Data” on
page 11
for more information. The table provides the
read parameters, and
Figure 13, on page 37
shows the
timing diagram.
Reset Command
Writing the reset command to the device resets the
device to reading array data. Address bits are don’t
care for this command.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the device to
reading array data. Once erasure begins, however, the
device ignores reset commands until the operation is
complete.
The reset command may be written between the
sequence cycles in a program command sequence
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0030h
Minor version number, ASCII
45h
8Ah
0000h
Address Sensitive Unlock
0 = Required, 1 = Not Required
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
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| AM29SL160CT-90EDN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
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| AM29SL160CT-90EIN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CT-90WCCN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
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