參數(shù)資料
型號： AM29SL400CB110WAF
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述： 256K X 16 FLASH 1.8V PROM, 110 ns, PBGA48
封裝： 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
文件頁數(shù)： 3/44頁
文件大?。?/td> 945K
代理商： AM29SL400CB110WAF
ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information is in-
tended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product
without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
Am29SL400C
Rev:
A
Amendment
+5
Am29SL400C
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only
Super Low Voltage Flash Memory
Distinctive Characteristics
■
Single power supply operation
— 1.65 to 2.2 V for read, program, and erase
operations
— Ideal for battery-powered applications
■
Manufactured on 0.32 μm process
technology
■
High performance
— Access times as fast as 100 ns
■
Ultra low power consumption (typical
values at 5 MHz)
— 1 μA Automatic Sleep Mode current
— 1 μA standby mode current
— 5 mA read current
— 20 mA program/erase current
■
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations
within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■
Top or bottom boot block configurations
available
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Minimum 1,000,000 erase cycle
guarantee per sector
■
20-year data retention at 125
°
C
■
Package option
— 48-ball FBGA
— 48-pin TSOP
■
Compatibility with JEDEC standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data
from, or program data to, a sector that is not
being erased, then resumes the erase
operation
■
Hardware reset pin (RESET#)
— Hardware method to reset the device to
reading array data
相關(guān)PDF資料
PDF描述
AM29SL400CT110WAI IR EMITTER GAAS 950NM
AM29SL400CB110WAI 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL400CB120WAD 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL400CT120WAF 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL400CB120WAF 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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