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參數(shù)資料
| 型號： | Am29SL800BB200ECB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），1.8伏的CMOS只超低電壓快閃記憶體 |
| 文件頁數(shù)： | 41/41頁 |
| 文件大小： | 543K |
| 代理商： | AM29SL800BB200ECB |
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Am29SL800B
41
A D V A N C E I N F O R M A T I O N
REVISION SUMMARY FOR AM29SL800B
Revision A+1
Ordering Information
Removed the dash from part numbers. Also removed
dash from remainder of data sheet, wherever it
occurred in the part number.
Reset Command
Deleted last paragraph in section, which applied to RE-
SET#, not the reset command.
Revision A+2
Figure 1, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “PLSCNT=1”
box in the path from “Protect another sector” back to
setting up the next sector address.
DC Characteristics
Changed Note 1 to indicate that OE# is at V
IH
for the
listed current.
Erase and Program Operations; Alternate CE#
Controlled Erase/Program Operations
Corrected the notes reference for t
WHWH1
and t
WHWH2
.
These parameters are 100% tested. Corrected the
note reference for t
VCS
. This parameter is not 100%
tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 23, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cy-
cles.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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