參數(shù)資料
型號(hào): Am29SL800BB200FIB
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),1.8伏的CMOS只超低電壓快閃記憶體
文件頁數(shù): 24/41頁
文件大?。?/td> 543K
代理商: AM29SL800BB200FIB
24
Am29SL800B
A D V A N C E I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 1 mA/MHz, with OE# at V
IH
. Typical V
CC
is 2.0 V
2. I
CC
active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 50 ns.
4. Not 100% tested.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9 Input Load Current
V
CC
= V
CC max
; A9 = 11.0 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Note 1)
CE# = V
IL,
OE#
=
V
IH,
Byte Mode
5 MHz
5
10
mA
1 MHz
1
2
CE# = V
IL,
OE#
=
V
IH,
Word Mode
5 MHz
5
10
1 MHz
1
2
I
CC2
V
CC
Active Write Current
(Notes 2 and 4)
CE# = V
IL,
OE#
=
V
IH
10
15
mA
I
CC3
V
CC
Standby Current
V
CC
= V
CC max
;
CE#, RESET# = V
CC
±
0.3 V
0.065
5
μA
I
CC4
V
CC
Reset Current
V
CC
= V
CC max
;
RESET# = V
SS
±
0.3 V
0.065
5
μA
I
CC5
Automatic Sleep Mode (Note 3)
V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V
0.065
5
μA
V
IL
Input Low Voltage
–0.5
0.2 x V
CC
V
V
IH
Input High Voltage
0.8 x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 2.0 V
9.0
11.0
V
V
OL1
Output Low Voltage
I
OL
= 2.0 mA, V
CC
= V
CC min
0.25
V
V
OL2
I
OL
= 100
μ
A, V
CC
= V
CC min
0.1
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
0.7 x V
CC
V
V
OH2
I
OH
= –100
μ
A, V
CC
= V
CC min
V
CC
–0.1
V
LKO
Low V
CC
Lock-Out Voltage
(Note 4)
1.2
1.5
V
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