• <source id="bmhjf"><del id="bmhjf"><cite id="bmhjf"></cite></del></source>
    <small id="bmhjf"><tfoot id="bmhjf"></tfoot></small>
    <dfn id="bmhjf"><samp id="bmhjf"><dfn id="bmhjf"></dfn></samp></dfn>        


    
    



    

    
  
    
    
    
    
  
    
  
  

    





    


    
 
 




 
 


    

    
    


    參數(shù)資料
    

    


    


    
型號(hào)：
Am29SL800BB200WBCB

    

    
廠商：
Advanced Micro Devices, Inc.

    

    
英文描述：
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

    

    
中文描述：
8兆位（1 M中的x 8-Bit/512畝x 16位），1.8伏的CMOS只超低電壓快閃記憶體

    

    
文件頁(yè)數(shù)：
9/41頁(yè)

    

    
文件大?。?/td>
543K

    

    
代理商：
AM29SL800BB200WBCB


    

    

    

	
    
    
    

    
    
	
    Am29SL800B
    9
    A D V A N C E  I N F O R M A T I O N
    Writing Commands/Command Sequences
    To write a command or command sequence (which in-
    cludes programming data to the device and erasing
    sectors of memory), the system must drive WE# and
    CE# to V
    IL
    , and OE# to V
    IH
    .
    For program operations, the BYTE# pin determines whether
    the device accepts program data in bytes or words. Refer to
    “Word/Byte Configuration” for more information. 
    The device features an 
    Unlock Bypass
     mode to facili-
    tate faster programming. Once the device enters the Un-
    lock Bypass mode, only two write cycles are required to
    program a word or byte, instead of four. The “Word/Byte
    Program Command Sequence” section has details on
    programming data to the device using both standard and
    Unlock Bypass command sequences.
    An erase operation can erase one sector, multiple sec-
    tors, or the entire device. Tables 2 and 3 indicate the
    address space that each sector occupies. A “sector ad-
    dress” consists of the address bits required to uniquely
    select a sector. The “Command Definitions” section
    has details on erasing a sector or the entire chip, or
    suspending/resuming the erase operation.
    After the system writes the autoselect command se-
    quence, the device enters the autoselect mode. The
    system can then read autoselect codes from the inter-
    nal register (which is separate from the memory array)
    on DQ7–DQ0. Standard read cycle timings apply in this
    mode. Refer to the Autoselect Mode and Autoselect
    Command Sequence sections for more information.
    I
    CC2
     in the DC Characteristics table represents the ac-
    tive current specification for the write mode. The “AC
    Characteristics” section contains timing specification
    tables and timing diagrams for write operations.
    Program and Erase Operation Status
    During an erase or program operation, the system may
    check the status of the operation by reading the status
    bits on DQ7–DQ0. Standard read cycle timings and I
    CC
    read specifications apply. Refer to “Write Operation
    Status” for more information, and to “AC Characteris-
    tics” for timing diagrams.
    Standby Mode
    When the system is not reading or writing to the de-
    vice, it can place the device in the standby mode. In
    this mode, current consumption is greatly reduced,
    and the outputs are placed in the high impedance
    state, independent of the OE# input. 
    The device enters the CMOS standby mode when the
    CE# and RESET# pins are both held at V
    CC 
    ±
     0.3 V.
    (Note that this is a more restricted voltage range than
    V
    IH
    .) If CE# and RESET# are held at V
    IH
    , but not within
    V
    CC 
    ±
     0.3 V, the device will be in the standby mode, but
    the standby current will be greater. The device requires
    standard access time (t
    CE
    ) for read access when the
    device is in either of these standby modes, before it is
    ready to read data.
    The device also enters the standby mode when the RE-
    SET# pin is driven low. Refer to the next section, RE-
    SET#: Hardware Reset Pin.
    If the device is deselected during erasure or program-
    ming, the device draws active current until the
    operation is completed.
    I
    CC3
     in the DC Characteristics table represents the
    standby current specification. 
    Automatic Sleep Mode
    The automatic sleep mode minimizes Flash device
    energy consumption. The device automatically
    enables this mode when addresses remain stable for
    t
    ACC
     + 50 ns. The automatic sleep mode is
    independent of the CE#, WE#, and OE# control
    signals. Standard address access timings provide new
    data when addresses are changed. While in sleep
    mode, output data is latched and always available to
    the system. I
    CC4
     in the DC Characteristics table
    represents the automatic sleep mode current
    specification.
    RESET#: Hardware Reset Pin
    The RESET# pin provides a hardware method of reset-
    ting the device to reading array data. When the RE-
    SET# pin is driven low for at least a period of t
    RP
    , the
    device
     immediately terminates
     any operation in
    progress, tristates all output pins, and ignores all
    read/write commands for the duration of the RESET#
    pulse. The device also resets the internal state ma-
    chine to reading array data. The operation that was in-
    terrupted should be reinitiated once the device is ready
    to accept another command sequence, to ensure data
    integrity.
    Current is reduced for the duration of the RESET#
    pulse. When RESET# is held at V
    SS
    ±0.3 V, the device
    draws CMOS standby current (I
    CC4
    ). If RESET# is held
    at V
    IL
     but not within V
    SS
    ±0.3 V, the standby current will
    be greater.
    The RESET# pin may be tied to the system reset cir-
    cuitry. A system reset would thus also reset the Flash
    memory, enabling the system to read the boot-up
    firmware from the Flash memory.
    If RESET# is asserted during a program or erase op-
    eration, the RY/BY# pin remains a “0” (busy) until the
    internal reset operation is complete, which requires a
    time of t
    READY
     (during Embedded Algorithms). The
    system can thus monitor RY/BY# to determine
    whether the reset operation is complete. If RESET# is
    asserted when a program or erase operation is not ex-
    ecuting (RY/BY# pin is “1”), the reset operation is
    completed within a time of t
    READY 
    (not during Embed-
    
    
    
    
    
    


    


    

    相關(guān)PDF資料
    		

    PDF描述
    		

    
    

    
AM29SL800CT150WBC
CAP 150UF 6.3V 20% TANT SMD-7343-30 TR-7

    

    
Am29SL800CT100WBIB
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

    

    
Am29SL800CB100WBIB
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

    

    
Am29SL800CT120WBIB
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

    

    
Am29SL800CB120WBIB
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

    

    

    

    


    


    

    相關(guān)代理商/技術(shù)參數(shù)
    		

    參數(shù)描述
    		

    
    

    
AM29SL800DB120WCI
 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 8MBIT 1MX8/512KX16 120NS 48FBGA - Trays

    

    
AM29SL800DB90WAD
 制造商:Spansion 功能描述:

    

    
AM29X305ADC
 制造商:Advanced Micro Devices 功能描述:Microprocessor, 8 Bit, 50 Pin, Ceramic, DIP

    

    
AM2A016
 制造商:MAG-LITE 功能描述:Bulk

    

    
AM2A026
 制造商:MAG-LITE 功能描述:Bulk

    

    
    
    
    
	
    	
    
    
     
     
    發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。
    
 
     
    

   	  
    
     

    
                    			    				      
    
                
    
                  
    
                    
                    
    
                      
    
                      
                      
    采購(gòu)需求
      (若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)
    
                      
                      
    發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)
    
                      
                      
    發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)
    
                       
                        
    
                                
                                
    
                                    *型號(hào)
                                    *數(shù)量
                                    廠商
                                    批號(hào)
                                    封裝
                                  
    
                                    
                                
                                
    
                                    
                                        
    
                                            
                                            
                                        
    
                                        		
                                     
                                    
                                        
    
                                        		
                                    
                                        
    
                                        		
                                    
                                        
    
                                        		
                                    
                                        
    
                                        		
                                  
    
                                  
                                   
                                    
                            
    
                             
                             
							                            
    
                          添加更多采購(gòu)
    
                      
    
                      
                      
    
                      
                      
    我的聯(lián)系方式
    
                     
                     
                       
    
                                
                                
                                
    
                                    
                                         *
                                    
                                    
                                  
    
                                  
                                  
    
                                    
                                         *
                                    
                                    
                                  
    
                                  
                                  
    
                                    
                                        
                                    
                                    
                                  
    
                                  
                                  
    
                                    
                                         *