參數(shù)資料
型號: Am29SL800CB100EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),1.8伏的CMOS只超低電壓快閃記憶體
文件頁數(shù): 26/41頁
文件大?。?/td> 549K
代理商: AM29SL800CB100EIB
26
Am29SL800C
P R E L I M I N A R Y
TEST CONDITIONS
Table 7.
Test Specifications
KEY TO SWITCHING WAVEFORMS
C
L
Device
Under
Test
22230A-15
Figure 11.
Test Setup
Test Condition
100
120, 150
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–2.0
V
Input timing measurement
reference levels
1.0
V
Output timing measurement
reference levels
1.0
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
2.0 V
0.0 V
1.0 V
1.0 V
Output
Measurement Level
Input
22230A-16
Figure 12.
Input Waveforms and Measurement Levels
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