參數(shù)資料
型號(hào): Am29SL800CB100FCB
廠商: Advanced Micro Devices, Inc.
英文描述: Unbuffered Inverter
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),1.8伏的CMOS只超低電壓快閃記憶體
文件頁數(shù): 36/41頁
文件大小: 549K
代理商: AM29SL800CB100FCB
36
Am29SL800C
P R E L I M I N A R Y
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the
“Erase and Programming Performance” section for more information.
Parameter
100
120
150
JEDEC
Std
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
120
150
ns
t
AVEL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
50
60
70
ns
t
DVEH
t
DS
Data Setup Time
Min
50
60
70
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
50
60
70
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation
(Notes 1, 2)
Byte
Typ
10
μs
Word
Typ
12
t
WHWH2
t
WHWH2
Sector Erase Operation (Notes 1, 2)
Typ
2
sec
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