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      參數(shù)資料
      型號: Am29SL800CB120WBCB
      廠商: Advanced Micro Devices, Inc.
      英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
      中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),1.8伏的CMOS只超低電壓快閃記憶體
      文件頁數(shù): 30/41頁
      文件大?。?/td> 549K
      代理商: AM29SL800CB120WBCB
      30
      Am29SL800C
      P R E L I M I N A R Y
      AC CHARACTERISTICS
      Erase/Program Operations
      Notes:
      1. Not 100% tested.
      2. See the
      “Erase and Programming Performance” section for more information.
      Parameter
      100
      120
      150
      JEDEC
      Std
      Description
      Unit
      t
      AVAV
      t
      WC
      Write Cycle Time (Note 1)
      Min
      100
      120
      150
      ns
      t
      AVWL
      t
      AS
      Address Setup Time
      Min
      0
      ns
      t
      WLAX
      t
      AH
      Address Hold Time
      Min
      50
      60
      70
      ns
      t
      DVWH
      t
      DS
      Data Setup Time
      Min
      50
      60
      70
      ns
      t
      WHDX
      t
      DH
      Data Hold Time
      Min
      0
      ns
      t
      OES
      Output Enable Setup Time
      Min
      0
      ns
      t
      GHWL
      t
      GHWL
      Read Recovery Time Before Write
      (OE# High to WE# Low)
      Min
      0
      ns
      t
      ELWL
      t
      CS
      CE# Setup Time
      Min
      0
      ns
      t
      WHEH
      t
      CH
      CE# Hold Time
      Min
      0
      ns
      t
      WLWH
      t
      WP
      Write Pulse Width
      Min
      50
      60
      70
      ns
      t
      WHWL
      t
      WPH
      Write Pulse Width High
      Min
      30
      ns
      t
      WHWH1
      t
      WHWH1
      Programming Operation (Notes 1, 2)
      Byte
      Typ
      10
      μs
      Word
      Typ
      12
      t
      WHWH2
      t
      WHWH2
      Sector Erase Operation (Notes 1, 2)
      Typ
      2
      sec
      t
      VCS
      V
      CC
      Setup Time
      Min
      50
      μs
      t
      RB
      Recovery Time from RY/BY#
      Min
      0
      ns
      t
      BUSY
      Program/Erase Valid to RY/BY# Delay
      Min
      200
      ns
      相關(guān)PDF資料
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