參數(shù)資料
型號(hào): Am29SL800CT150EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),1.8伏的CMOS只超低電壓快閃記憶體
文件頁數(shù): 31/41頁
文件大?。?/td> 549K
代理商: AM29SL800CT150EIB
Am29SL800C
31
P R E L I M I N A R Y
AC CHARACTERISTICS
OE#
WE#
CE#
V
CC
Data
Addresses
t
DS
t
AH
t
DH
t
WP
PD
t
WHWH1
t
WC
t
AS
t
WPH
t
VCS
555h
PA
PA
Read Status Data (last two cycles)
A0h
t
GHWL
t
CS
Status
D
OUT
Program Command Sequence (last two cycles)
RY/BY#
t
RB
t
BUSY
t
CH
PA
Notes:
1. PA = program address, PD = program data, D
OUT
is the true data at the program address.
2. Illustration shows device in word mode.
22230A-21
Figure 17.
Program Operation Timings
相關(guān)PDF資料
PDF描述
AM29SL800CT150FC Triple 3-Input NAND Gates 14-SOIC -55 to 125
Am29SL800CT150FCB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL800CT150FI Triple 3-Input NAND Gates 14-SOIC -55 to 125
Am29SL800CT150FIB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL800CT150WBI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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