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參數(shù)資料
| 型號： | AM41DL6408G30IS |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| 中文描述： | 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同時作業(yè)閃存和8兆位（1 M中的x 8-Bit/512畝x 16位），靜態(tài)存儲器 |
| 文件頁數(shù)： | 63/63頁 |
| 文件大?。?/td> | 573K |
| 代理商： | AM41DL6408G30IS |
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62
Am41DL6408G
August 19, 2002
P R E L I M I N A R Y
REVISION SUMMARY
Revision A (October 24, 2001)
Initial release.
Revision A+1 (November 26, 2001)
Global
The abbreviation for Sector Address has been
changed from SA to SADD.
Connection Diagrams
Changed ball E4 to “Shared” coloring.
Tables 1–4, Device Bus Operations
Added Table 4. Changed formatting and specifications
to be consistent with other AMD flash memory mu-
lit-chip offerings.
Table 6, Bank Address
Added table.
Table 13, Primary Vendor-Specific Extended Query
Modified descriptions for addresses 4Ah, 4Fh. Deleted
note.
Table 14, Am29DL640G Command Definitions
Corrected descriptions for SADD and BA in legend.
Clarified Note 5.
DC Characteristics table
Changed minimum specification for V
ID
.
Flash Read-Only Operations table
Changes maximum t
OE
for 85 ns SRAM.
Erase and Program Operations table, Alternate
CE#f Controlled Erase and Program Operations
table
Changed t
AH
specification for both 70 and 85 ns.
Changed t
DS
for 70 ns, t
WHWH1
, t
WHWH2
, and t
BUSY
.
Flash Erase And Programming Performance table
Changed typical and maximum specifications for sec-
tor erase time. Changed typical specification of chip
erase.
Revision B (August 19, 2002)
Global
Added 55 ns SRAM speed grade.
MCP Block Diagram
Removed A-1 from DQ15/A-1 input to Flash Memory
and SRAM
Trademarks
Copyright 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM41DL6408G30IT | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL6408G35IS | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL6408G35IT | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL6408G40IS | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL6408G40IT | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM41DL6408G30IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL6408G35IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL6408G35IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL6408G40IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41DL6408G40IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
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