參數(shù)資料
型號(hào)： AM41PDS3224DB110IT
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
中文描述： 32兆位（2米× 16位），1.8伏的CMOS只，同時(shí)操作，頁面模式閃存和4兆位（512畝x 8-Bit/256畝x 16位），靜態(tài)存儲(chǔ)器
文件頁數(shù)： 4/59頁
文件大?。?/td> 560K
代理商： AM41PDS3224DB110IT
May 13, 2002
Am41PDS3224D
3
P R E L I M I N A R Y
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .5
MCP Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . 5
Flash Memory Block Diagram. . . . . . . . . . . . . . . . 6
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . .7
Special Package Handling Instructions ....................................7
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .9
MCP Device Bus Operations. . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations—SRAM Word Mode, CIOs = V
CC
10
Table 2. Device Bus Operations—SRAM Byte Mode, CIOs = V
11
Flash Device Bus Operations . . . . . . . . . . . . . . .12
Requirements for Reading Array Data ...................................12
Read Mode .............................................................................12
Random Read (Non-Page Mode Read) ..............................12
Page Mode Read ....................................................................12
Table 3. Page Word Mode ..............................................................12
Writing Commands/Command Sequences ............................12
Accelerated Program Operation ..........................................12
Autoselect Functions ...........................................................13
Simultaneous Read/Write Operations with Zero Latency .......13
Standby Mode ........................................................................13
Automatic Sleep Mode ...........................................................13
RESET#: Hardware Reset Pin ...............................................13
Output Disable Mode ..............................................................14
Table 4. Am29PDS322DT Top Boot Sector Addresses ..................14
Table 5. Am29PDS322DT Top Boot SecSi Sector Address ...........15
Table 6. Am29PDS322DB Bottom Boot Sector Addresses ............15
Am29PDS322DB Bottom Boot SecSi Sector Address.................... 17
Autoselect Mode .....................................................................17
Sector/Sector Block Protection and Unprotection ..................17
Table 8. Top Boot Sector/Sector Block Addresses for Protection/Un-
protection ........................................................................................17
Table 9. Bottom Boot Sector/Sector Block Addresses for Protec-
tion/Unprotection .............................................................................18
Write Protect (WP#) ................................................................18
Temporary Sector/Sector Block Unprotect .............................18
Figure 1. Temporary Sector Unprotect Operation........................... 19
Figure 2. In-System Sector/Sector Block Protect and Unprotect Algo-
rithms.............................................................................................. 20
SecSi (Secured Silicon) Sector Flash Memory Region ..........21
Factory Locked: SecSi Sector Programmed and Protected
attheFactory ......................................................................21
Hardware Data Protection ......................................................21
Low V
CC
Write Inhibit ...........................................................21
Write Pulse “Glitch” Protection ............................................22
Logical Inhibit ......................................................................22
Power-Up Write Inhibit .........................................................22
Flash Command Definitions . . . . . . . . . . . . . . . . 22
Reading Array Data ................................................................22
Reset Command .....................................................................22
Autoselect Command Sequence ............................................22
Enter SecSi Sector/Exit SecSi Sector Command Sequence ..23
Word Program Command Sequence .....................................23
Unlock Bypass Command Sequence ..................................23
Figure 3. Unlock Bypass Algorithm................................................. 24
Figure 4. Program Operation.......................................................... 24
Chip Erase Command Sequence ...........................................24
Sector Erase Command Sequence ........................................25
Erase Suspend/Erase Resume Commands ...........................25
Figure 5. Erase Operation.............................................................. 26
Table 10. Am29PDS322D Command Definitions........................... 27
Flash Write Operation Status . . . . . . . . . . . . . . . 28
DQ7: Data# Polling .................................................................28
Figure 6. Data# Polling Algorithm.................................................. 28
RY/BY#: Ready/Busy# ............................................................29
DQ6: Toggle Bit I ....................................................................29
Figure 7. Toggle Bit Algorithm........................................................ 29
DQ2: Toggle Bit II ...................................................................30
Reading Toggle Bits DQ6/DQ2 ...............................................30
DQ5: Exceeded Timing Limits ................................................30
DQ3: Sector Erase Timer .......................................................30
Table 11. Write Operation Status ...................................................31
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 32
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 32
Industrial (I) Devices ............................................................32
V
CC
f/V
CC
s Supply Voltage ...................................................32
Flash DC Characteristics . . . . . . . . . . . . . . . . . . 33
CMOS Compatible ..................................................................33
SRAM DC and Operating Characteristics . . . . . 34
Figure 10. I
CC1
Current vs. Time (Showing Active and Automatic
SleepCurrents).............................................................................. 35
Figure 11. Typical I
vs. Frequency............................................ 35
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 12. Test Setup.................................................................... 36
Table 12. Test Specifications .........................................................36
Key To Switching Waveforms . . . . . . . . . . . . . . . 36
Figure 13. Input Waveforms and Measurement Levels................. 36
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37
SRAM CE#s Timing ................................................................37
Figure 14. Timing Diagram for Alternating
Between SRAM to Flash................................................................ 37
Figure 15. Conventional Read Operation Timings......................... 38
Figure 16. Page Mode Read Timings............................................ 39
Hardware Reset (RESET#) ....................................................40
Figure 17. Reset Timings............................................................... 40
Flash Erase and Program Operations ....................................41
Figure 18. Program Operation Timings.......................................... 42
Figure 19. Accelerated Program Timing Diagram.......................... 42
Figure 20. Chip/Sector Erase Operation Timings.......................... 43
Figure 21. Back-to-back Read/Write Cycle Timings...................... 44
Figure 22. Data# Polling Timings (During Embedded Algorithms). 44
Figure 23. Toggle Bit Timings (During Embedded Algorithms)...... 45
Figure 24. DQ2 vs. DQ6................................................................. 45
Temporary Sector/Sector Block Unprotect .............................46
Figure 25. Temporary Sector/Sector Block Unprotect
Timing Diagram.............................................................................. 46
Figure 26. Sector/Sector Block Protect and Unprotect
Timing Diagram.............................................................................. 47
Alternate CE#f Controlled Erase and Program Operations ....48
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Op-
eration Timings............................................................................... 49
SRAM AC Characteristics . . . . . . . . . . . . . . . . . . 50
Read Cycle .............................................................................50
Figure 28. SRAM Read Cycle—Address Controlled...................... 50
Figure 29. SRAM Read Cycle........................................................ 51
相關(guān)PDF資料
PDF描述
AM41PDS3224DB11IS 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB11IT 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB35IS 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB35IT 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB40IS 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM41PDS3224DB11IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB11IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB35IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB35IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB40IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*