參數(shù)資料
型號(hào)： AM41PDS3224DB45IT
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
中文描述： 32兆位（2米× 16位），1.8伏的CMOS只，同時(shí)操作，頁(yè)面模式閃存和4兆位（512畝x 8-Bit/256畝x 16位），靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù)： 34/59頁(yè)
文件大?。?/td> 560K
代理商： AM41PDS3224DB45IT
May 13, 2002
Am41PDS3224D
33
P R E L I M I N A R Y
Notes:
1.
2.
3.
4.
5.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
I
CC
active while Embedded Erase or Embedded Program is in progress.
Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode current is 200 nA.
Not 100% tested.
FLASH DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
I
LIT
I
LO
I
LIA
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
V
CC
= V
CC max
; RESET# = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC max
V
CC
= V
CC max
, WP#/ACC = V
ACC max
±
1.0
μA
RESET# Input Load Current
35
μA
Output Leakage Current
±
1.0
μA
ACC Input Leakage Current
35
μA
I
CC1
f
Flash V
Active Inter-Page Read Current
(Notes 1, 2)
CE#f = V
IL
,
OE# = V
IH
,
1 MHz
2.5
3
mA
10 MHz
24
28
I
CC2
f
Flash V
CC
Active Write Current (Notes 2, 3)
CE#f = V
IL,
OE# = V
IH
V
f = V
, CE#f,
RESET# = V
CC
±
0.3 V
V
f = V
, WP#/ACC = V
CC
f
±
0.3 V,
RESET# = V
SS
±
0.3 V
V
f = V
, CE#f = V
SS
±
0.3 V;
RESET# = V
±
0.3 V,
V
IN
= V
CC
±
0.3 V or V
SS
±
0.3 V
15
30
mA
I
CC3
f
Flash V
CC
Standby Current (Note 2)
0.2
5
μA
I
CC4
f
Flash V
CC
Reset Current (Note 2)
0.1
5
μA
I
CC5
f
Flash V
Automatic Sleep Mode Current
(Notes 2, 4)
0.2
5
μA
I
CC6
f
Flash V
Active Read-While-Program
Current (Notes 1, 2, 5)
CE#f = V
IL
,
OE# = V
IH
30
55
mA
I
CC7
f
Flash V
Active Read-While-Erase Current
(Notes 1, 2, 5)
CE#f = V
IL
, OE# = V
IH
30
55
mA
I
CC8
f
Flash V
Active
Program-While-Erase-Suspended Current
(Note 2)
CE#f = V
IL
, OE# = V
IH
17
35
mA
I
CC9
f
Flash V
CC
Active Intra-Page Read Current
CE#f = V
IL
, OE# = V
IH
10 MHz
0.5
1
mA
20 MHz
1
2
I
ACC
V
IL
V
IH
WP#/ACC Accelerated Program Current
V
CC
= V
CCMax
, WP#/ACC = V
ACCMax
12
20
mA
Input Low Voltage
–0.5
0.2 x V
CC
V
CC
+ 0.3
V
Input High Voltage
0.8 x V
CC
V
V
ACC
/V
HH
Voltage for WP#/ACC Program Acceleration
and Sector Protection/Unprotection
8.5
9.5
V
V
ID
Voltage for Sector Protection, Autoselect and
Temporary Sector Unprotect
9
11
V
V
OL
V
OH1
V
OH2
V
LKO
Output Low Voltage
I
OL
= 4.0 mA, V
CC
f = V
CC
s = V
CC min
I
OH
= –2.0 mA, V
CC
f = V
CC
s = V
CC min
I
OH
= –100 μA, V
CC
= V
CC min
0.1
V
Output High Voltage
0.85 x V
CC
V
CC
–0.1
1.2
V
Flash Low V
CC
Lock-Out Voltage (Note 5)
1.5
V
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PDF描述
AM41PDS3224DB70IS 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM41PDS3224DB70IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DB70IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT100IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT100IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT10IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
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