參數(shù)資料
型號(hào)： AM41PDS3224DT100IT
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
中文描述： 32兆位（2米× 16位），1.8伏的CMOS只，同時(shí)操作，頁(yè)面模式閃存和4兆位（512畝x 8-Bit/256畝x 16位），靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù)： 35/59頁(yè)
文件大?。?/td> 560K
代理商： AM41PDS3224DT100IT
34
Am41PDS3224D
May 13, 2002
P R E L I M I N A R Y
Note:
Typical values measured at V
CC
= 2.0 V, T
A
= 25
°
C. Not 100% tested.
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
–1.0
1.0
μA
I
LO
Output Leakage Current
CE1#s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
–1.0
1.0
μA
I
CC
Operating Power Supply Current
I
IO
= 0 mA, CE1#s = V
IL
, CE2s =
WE# = V
IH
, V
IN
= V
IH
or V
IL
2
mA
I
CC1
s
Average Operating Current
Cycle time = 1 μs, 100% duty,
I
IO
= 0 mA, CE1#s
≤
0.2 V,
CE2
≥
V
CC
– 0.2 V, V
IN
≤
0.2 V or
V
IN
≥
V
CC
– 0.2 V
2
mA
I
CC2
s
Average Operating Current
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
IL
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
17
mA
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.2
V
V
OH
Output High Voltage
I
OH
= –0.1 mA
CE1#s
≥
V
CC
– 0.2 V, CE2
≥
V
CC
–
0.2 V (CE1#s controlled) or CE2
≤
0.2 V (CE2s controlled), CIOs =
V
SS
or V
CC
, Other input = 0 ~ V
CC
1.4
V
I
SB1
Standby Current (CMOS)
0.5
8
μA
相關(guān)PDF資料
PDF描述
AM41PDS3224DT10IS 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT10IT 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT110IS 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT11IS 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT11IT 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM41PDS3224DT10IS 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT10IT 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT110IS 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT110IT 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
AM41PDS3224DT11IS 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
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