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參數(shù)資料
| 型號： | AM41PDS3224DT110IT |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| 中文描述： | 32兆位（2米× 16位），1.8伏的CMOS只，同時操作，頁面模式閃存和4兆位（512畝x 8-Bit/256畝x 16位），靜態(tài)存儲器 |
| 文件頁數(shù)： | 5/59頁 |
| 文件大?。?/td> | 560K |
| 代理商： | AM41PDS3224DT110IT |
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Am41PDS3224D
May 13, 2002
P R E L I M I N A R Y
Write Cycle .............................................................................52
Figure 30. SRAM Write Cycle—WE# Control................................. 52
Figure 31. SRAM Write Cycle—CE1#s Control.............................. 53
Figure 32. SRAM Write Cycle—UB#s and LB#s Control................ 54
Flash Erase And Programming Performance . .55
Flash Latchup Characteristics . . . . . . . . . . . . . . 55
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 55
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 55
SRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 56
Figure 33. CE1#s Controlled Data Retention Mode....................... 56
Figure 34. CE2s Controlled Data Retention Mode......................... 56
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 57
FLB073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm .............57
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 58
Revision A (February 18, 2002) ..............................................58
Revision A+1 (May 13, 2002) .................................................58
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM41PDS3224DB100IS | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB100IT | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB10IS | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB10IT | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DB110IS | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM41PDS3224DT11IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DT11IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DT35IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DT35IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3224DT40IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
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