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參數(shù)資料
| 型號： | AM41PDS3224DT70IS |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| 中文描述： | 32兆位（2米× 16位），1.8伏的CMOS只，同時操作，頁面模式閃存和4兆位（512畝x 8-Bit/256畝x 16位），靜態(tài)存儲器 |
| 文件頁數(shù)： | 24/59頁 |
| 文件大?。?/td> | 560K |
| 代理商： | AM41PDS3224DT70IS |
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May 13, 2002
Am41PDS3224D
23
P R E L I M I N A R Y
The autoselect command sequence is initiated by writ-
ing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect mode,
and the system may read any number of autoselect
codes without reinitiating the command sequence.
Table 10 shows the address and data requirements for
the command sequence. To determine sector protec-
tion information, the system must write to the appropri-
ate sector group address (SGA). Tables 4 and 6 show
the address range associated with each sector.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the de-
vice was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing an 16-byte random Electronic Serial Num-
ber (ESN). The system can access the SecSi Sector
region by issuing the three-cycle Enter SecSi Sector
command sequence. The device continues to access
the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The
Exit SecSi Sector command sequence returns the de-
vice to normal operation. Table 10 shows the address
and data requirements for both command sequences.
See also “SecSi (Secured Silicon) Sector Flash Mem-
ory Region” for further information. Note that a hard-
ware reset (RESET#=V
IL
) will reset the device to
reading array data.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The pro-
gram command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program al-
gorithm. The system is
not
required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Table 10 shows the address
and data requirements for the program command se-
quence.
When the Embedded Program algorithm is complete,
the device then returns to the read mode and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Flash Write Oper-
ation Status section for information on these status
bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored.
Note that a
hardware reset
immediately terminates the program
operation. The program command sequence should
be reinitiated once the device has returned to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries.
A bit cannot be programmed
from “0” back to a “1.”
Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a
“0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram words to the device faster than using the stan-
dard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
The device then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass pro-
gram command, A0h; the second cycle contains the
program address and data. Additional data is pro-
grammed in the same manner. This mode dispenses
with the initial two unlock cycles required in the stan-
dard program command sequence, resulting in faster
total programming time. Table 10 shows the require-
ments for the command sequence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the data
90h. The second cycle must contain the data 00h. The
device then returns to reading array data. See Figure
3 for the unlock bypass algorithm.
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| AM41PDS3224DT70IT | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3228DB10IS | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41PDS3228DB10IT | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41PDS3228DB11IS | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM41PDS3224DT70IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM |
| AM41PDS3228D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM (Preliminary) |
| AM41PDS3228DB10IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41PDS3228DB10IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
| AM41PDS3228DB11IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM |
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