參數(shù)資料
型號: AM82731-012
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 INCH, FM-2
文件頁數(shù): 1/1頁
文件大?。?/td> 87K
代理商: AM82731-012
AM82731-012
NPN RF POWER TRANSISTOR
DESCRIPTION:
The AM82731-012 is a Common
Base Device Designed for Pulsed S-
Band Pulse output and driver Radar
Amplifier Applications.
FEATURES INCLUDE:
Input/Output Matching
Gold Metallization
Emitter Ballasting
MAXIMUM RATINGS
IC
2.0 A
VCC
46 V
PDISS
50 W @ TC ≤ 50 °C
TJ
-65 °C to+250 °C
TSTG
-65 °C to+200 °C
θ
JC
4.0 °C/W
PACKAGE STYLE 400 2L FLG
1 = COLLECTOR
2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVCBO
IC = 7.0 mA
55
V
BVCER
IC = 7.0 mA
RBE = 10
55
V
BVEBO
IE = 1.0 mA
3.5
V
ICES
VCE = 40 V
0.5
mA
hFE
VCE = 5 V
IC = 600 mA
30
300
---
POUT
η
C
PG
VCC = 40 V
PIN = 3.0 W
f = 2.7 to 3.1 GHz
12
30
6.0
W
%
dB
Note:
Pulse Width = 100
μS
Duty Cycle = 10%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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