參數(shù)資料
型號(hào)： AMD29F010B-45EC
廠商： Advanced Micro Devices, Inc.
英文描述： 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述： 1兆位（128畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體
文件頁(yè)數(shù)： 3/34頁(yè)
文件大小： 779K
代理商： AMD29F010B-45EC
Am29F010B
3
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .5
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .9
Table 1. Am29F010B Device Bus Operations .................................9
Requirements for Reading Array Data .....................................9
Writing Commands/Command Sequences ..............................9
Program and Erase Operation Status ....................................10
Standby Mode ........................................................................10
Output Disable Mode ..............................................................10
Table 2. Am29F010B Sector Addresses Table ...............................10
Autoselect Mode .....................................................................10
Table 3. Am29F010B Autoselect Codes (High Voltage Method) ....11
Sector Protection/Unprotection ...............................................11
Hardware Data Protection ......................................................11
Low V
CC
Write Inhibit ......................................................................11
Write Pulse “Glitch” Protection ........................................................11
Logical Inhibit ..................................................................................11
Power-Up Write Inhibit ....................................................................11
Command Definitions . . . . . . . . . . . . . . . . . . . . . .12
Reading Array Data ................................................................12
Reset Command .....................................................................12
Autoselect Command Sequence ............................................12
Byte Program Command Sequence .......................................12
Figure 1. Program Operation ..........................................................13
Chip Erase Command Sequence ...........................................13
Sector Erase Command Sequence ........................................13
Erase Suspend/Erase Resume Commands ...........................14
Figure 2. Erase Operation ...............................................................14
Command Definitions .............................................................15
Table 4. Am29F010B Command Definitions ...................................15
Write Operation Status . . . . . . . . . . . . . . . . . . . . .16
DQ7: Data# Polling .................................................................16
Figure 3. Data# Polling Algorithm ...................................................16
DQ6: Toggle Bit I ....................................................................16
Reading Toggle Bit DQ6 .........................................................17
Figure 4. Toggle Bit Algorithm .........................................................17
DQ5: Exceeded Timing Limits ................................................17
DQ3: Sector Erase Timer .......................................................18
Table 5. Write Operation Status ..................................................... 18
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 19
Figure 5. Maximum Negative Overshoot Waveform ...................... 19
Figure 6. Maximum Positive Overshoot Waveform ........................ 19
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 19
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 20
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7. Test Setup ....................................................................... 22
Table 6. Test Specifications ........................................................... 22
Key to Switching Waveforms . . . . . . . . . . . . . . . 22
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 8. Read Operations Timings ............................................... 23
Erase and Program Operations ......................................................... 24
Figure 9. Program Operation Timings ............................................ 25
Figure 10. Chip/Sector Erase Operation Timings .......................... 25
Figure 11. Data# Polling Timings (During Embedded Algorithms) . 26
Figure 12. Toggle Bit Timings (During Embedded Algorithms) ...... 26
Erase and Program Operations ......................................................... 27
Alternate CE# Controlled Writes .................................................... 27
Figure 13. Alternate CE# Controlled Write Operation Timings ...... 28
Erase and Programming Performance . . . . . . . 28
Latchup Characteristic . . . . . . . . . . . . . . . . . . . . 29
TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . 29
PLCC and PDIP Pin Capacitance . . . . . . . . . . . . 29
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 30
PD 032—32-Pin Plastic DIP ...................................................30
PL 032—32-Pin Plastic Leaded Chip Carrier .........................31
TS 032—32-Pin Standard Thin Small Outline Package .........32
TSR 032—32-Pin Standard Thin Small Outline Package .......33
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 34
Revision A (August 12, 1999) .................................................34
Revision A+1 (September 22, 1999) ......................................34
Revision A+2 (September 27, 1999) ......................................34
Revision B (November 12, 1999) ............................................34
Revision C (November 28, 2000) ...........................................34
相關(guān)PDF資料
PDF描述
AMD29F010B-45EE 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AMD29F010B-45EI 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AMD29F010B-45FC 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AMD29F010B-45FE 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AMD29F010B-45FI 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AMD29F010B-45EE 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AMD29F010B-45EI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AMD29F010B-45FC 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AMD29F010B-45FE 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AMD29F010B-45FI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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